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ACS Applied Materials & Interfaces|February 5, 2019
Extraordinary Radiation Hardness of Atomically Thin MoS2Andrew J Arnold, Tan Shi, Igor Jovanovic, et al.Chemical Society Reviews|March 3, 2018
Contact engineering for 2D materials and devicesDaniel S Schulman, Andrew J Arnold, Saptarshi DasACS Nano|October 7, 2020
Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect TransistorsAndrew J Arnold, Daniel S Schulman, Saptarshi DasACS Nano|January 28, 2021
Satisfiability Attack-Resistant Camouflaged Two-Dimensional Heterostructure DevicesAkshay Wali, Shamik Kundu, Andrew J Arnold, et al.Nanoscale|October 26, 2019
Proton irradiation of graphene: insights from atomistic modelingTan Shi, Qing Peng, Zhitong Bai, et al.Scientific Reports|June 25, 2017
Effects of energetic ion irradiation on WSe2/SiC heterostructuresTan Shi, Roger C Walker, Igor Jovanovic, et al.ACS Applied Materials & Interfaces|December 7, 2017
Facile Electrochemical Synthesis of 2D Monolayers for High-Performance Thin-Film TransistorsDaniel S Schulman, Amritanand Sebastian, Drew Buzzell, et al.ACS Nano|March 7, 2017
Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 TransistorsAndrew J Arnold, Ali Razavieh, Joseph R Nasr, et al.Scientific Reports|October 11, 2016
Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON currentSaptarshi DasPlos One|June 25, 2024
Stabilizing regions of dominant pole placement for second order lead processes with time delay using filtered PID controllersKaushik Halder, Saptarshi DasPageof 26