Related Experiment Video
Updated: Jan 29, 2026
10:45
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
698
Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device
Xuanqi Huang1, Runchen Fang1,2, Chen Yang1
1School of Electrical, Computer & Energy Engineering, Arizona State University, Tempe, AZ 85287, United States of America.
Nanotechnology
|February 6, 2019
Summary
Researchers developed a steep-slope transistor using aluminum gallium nitride/gallium nitride (AlGaN/GaN) metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with silicon dioxide (SiO2) threshold switching devices. This innovation achieves ultra-low subthreshold swing for efficient power electronics.
Area of Science:
- Materials Science and Engineering
- Semiconductor Device Physics
- Electronics and Electrical Engineering
Background:
- Traditional transistors face limitations in achieving steep switching characteristics, impacting energy efficiency.
- Metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) offer potential for high-performance electronics.
- Silicon dioxide (SiO2) based threshold switching devices show promise for novel electronic functionalities.
Purpose of the Study:
- To demonstrate a steep-slope field-effect transistor by integrating SiO2-based threshold switching devices with AlGaN/GaN MIS-HEMTs.
- To investigate the electrical characteristics, including subthreshold swing, leakage current, and ON/OFF ratio, of the integrated device.
- To assess the repeatability and potential applications of the developed steep-slope transistor.
Main Methods:
- Fabrication of AlGaN/GaN MIS-HEMTs integrated with series-connected SiO2-based threshold switching devices.
- Characterization of the integrated device's transfer characteristics at room temperature.
- Analysis of subthreshold swing, transition range, leakage current, and ON/OFF ratio.
Main Results:
- Achieved a steep-slope transistor with a subthreshold swing below 5 mV/dec and a transition range exceeding 10^5.
- Demonstrated low leakage current (10^-5 μA/μm) and a high ON/OFF current ratio (>10^7).
- Observed good repeatability (average steep slopes < 10 mV/dec) and a positive shift in threshold voltage.
Conclusions:
- The integration of SiO2-based threshold switching devices with AlGaN/GaN MIS-HEMTs successfully creates a steep-slope transistor.
- The developed device exhibits excellent switching performance, low leakage, and high ON/OFF ratio, suitable for power electronics.
- This approach is extendable to other transistor platforms (Si, III-V) and holds potential for power switching and high-frequency applications.
More Related Videos
Related Concept Videos
01:29Field Effect Transistor
1.2K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.2K
01:22Switching of BJT
853
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
853
03:14Oxidation Numbers
42.5K
In redox reactions, the transfer of electrons occurs between reacting species. Electron transfer is described by a hypothetical number called the oxidation number (or oxidation state). It represents the effective charge of an atom or element, which is assigned using a set of rules.
42.5K
01:22Bipolar Junction Transistor
1.5K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.5K
01:30Design Example: Identifying the Locations of Monuments in the Field Using Global Positioning System Device
409
Surveyors use Global Positioning System (GPS) technology to measure the precise location and elevation of points on Earth. In a recent survey, GPS receivers were used to determine the coordinates and elevations of two park monuments. The process involved careful mission planning, data collection, and correction to ensure accuracy. The survey began with mission planning to identify optimal satellite visibility and minimize Position Dilution of Precision (PDOP). A geodetic control point...
409
01:15Pyruvate Oxidation
168.8K
After glycolysis, the charged pyruvate molecules enter the mitochondria via active transport and undergo three enzymatic reactions. These reactions ensure that pyruvate can enter the next metabolic pathway so that energy stored in the pyruvate molecules can be harnessed by the cells.
First, the enzyme pyruvate dehydrogenase removes the carboxyl group from pyruvate and releases it as carbon dioxide. The stripped molecule is then oxidized and releases electrons, which are then picked up by NAD+...
First, the enzyme pyruvate dehydrogenase removes the carboxyl group from pyruvate and releases it as carbon dioxide. The stripped molecule is then oxidized and releases electrons, which are then picked up by NAD+...
168.8K