Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications

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Zhen-Yu He1, Tian-Yu Wang1, Lin Chen2

  • 1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.

Nanoscale Research Letters
|February 9, 2019
PubMed

Keywords:
Computing in-memoryImplementedRRAMSwitching

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