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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Bonding in Metals02:32

Bonding in Metals

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Metallic bonds are formed between two metal atoms. A simplified model to describe metallic bonding has been developed by Paul Drüde called the “Electron Sea Model”. 
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Metallic Solids02:37

Metallic Solids

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Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
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Alkali Metals03:06

Alkali Metals

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Group 1 elements are soft and shiny metallic solids. They are malleable, ductile, and good conductors of heat and electricity. The melting points of the alkali metals are unusually low for metals and decrease going down the group, while the density increases going down the group with the exception of potassium (Table 1).
Table 1: Properties of the alkali metals
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Metal-Ligand Bonds02:51

Metal-Ligand Bonds

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The hemoglobin in the blood, the chlorophyll in green plants, vitamin B-12, and the catalyst used in the manufacture of polyethylene all contain coordination compounds. Ions of the metals, especially the transition metals, are likely to form complexes.
In these complexes, transition metals form coordinate covalent bonds, a kind of Lewis acid-base interaction in which both of the electrons in the bond are contributed by a donor (Lewis base) to an electron acceptor (Lewis acid). The Lewis acid in...
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Related Experiment Video

Updated: Jan 29, 2026

Quantification of Metal Leaching in Immobilized Metal Affinity Chromatography
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Quantification of Metal Leaching in Immobilized Metal Affinity Chromatography

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Complementary Resistive Switching Using Metal-Ferroelectric-Metal Tunnel Junctions.

Mengdi Qian1, Ignasi Fina1, Florencio Sánchez1

  • 1Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Catalonia, Spain.

Small (Weinheim an Der Bergstrasse, Germany)
|February 12, 2019
PubMed
Summary
This summary is machine-generated.

This study introduces a novel complementary resistive switching (CRS) memory element using two ferroelectric tunnel junctions. This device offers nonvolatile binary storage with reduced power consumption, addressing critical issues in resistive switching memory arrays.

Keywords:
BaTiO3complementary resistive switchingferroelectricferroelectric tunnel junctions

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • Resistive switching (RS) memory arrays face challenges with current-sneak and current-leakage issues.
  • Complementary resistive switching (CRS) devices offer a potential solution to these limitations.
  • Ferroelectric tunnel junctions (FTJs) are emerging as promising building blocks for advanced memory devices.

Purpose of the Study:

  • To demonstrate a novel CRS memory element based on an anti-serial connection of two ferroelectric tunnel junctions.
  • To investigate the nonvolatile binary storage capabilities and resistance characteristics of the proposed CRS device.
  • To evaluate the power consumption and reading schemes of the dual-tunnel CRS memory element.

Main Methods:

  • Fabrication of a CRS memory element using two BaTiO3-based ferroelectric tunnel junctions with symmetric electrodes and a common floating bottom electrode.
  • Characterization of nonvolatile binary storage states (High Resistance State + Low Resistance State and vice versa).
  • Experimental demonstration of writing protocols, non-destructive/destructive reading schemes, and power consumption analysis.

Main Results:

  • The fabricated device exhibits complementary resistive switching behavior with identical and large resistance in remanent states.
  • Nonvolatile binary storage ('1' = HRS+LRS, '0' = LRS+HRS) is achieved.
  • Reading schemes can be selected by adjusting the reading voltage amplitude, and the device shows significantly lower power consumption compared to single FTJs.

Conclusions:

  • The anti-serial connection of two ferroelectric tunnel junctions effectively constitutes a CRS memory element.
  • This CRS device addresses critical bottlenecks in data storage by mitigating current-sneak and leakage issues.
  • The findings highlight the potential of ferroelectric tunnel junctions for developing energy-efficient and high-performance memory and logic applications.