Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Switching of BJT01:22

Switching of BJT

849
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
849
What is Behavior?00:54

What is Behavior?

10.3K
Behaviors are actions that an organism engages in—they can be related to finding food, reproducing, defending against threats, and many other possible actions. Behaviors include activities related to the environment around the animal—such as migration—as well as social interactions within a species or population. Many behaviors involve motor output—that is, muscle movements—while others involve less visible actions, such as learning.
10.3K
Resistivity01:22

Resistivity

4.5K
When a voltage is applied to a conductor, an electrical field is generated, and charges in the conductor feel the force due to the electrical field. The current density that results depends on the electrical field and the properties of the material. In some materials, including metals at a given temperature, the current density is approximately proportional to the electrical field. In these cases, the current density can be modeled as:
4.5K
Resistance01:19

Resistance

5.9K
When a current moves through any conductor, the conductor causes some level of difficulty for the current to flow. The measure of that difficulty is known as the resistance of the material and is represented by R. Every material has its own resistance. In the case of conductors, heat is emitted whenever a current passes through them. Resistance depends on the resistivity of the material. Resistivity is a characteristic of the material used to fabricate electrical components, whereas the...
5.9K
Equivalent Resistance01:16

Equivalent Resistance

976
In circuit analysis, situations often arise where resistors are neither in series nor parallel configurations. To tackle such scenarios, three-terminal equivalent networks like the wye (Y) (Figure 1 (a)) or tee (T) and delta (Δ) (Figure 1 (b)) or pi (π) networks come into play. These networks offer versatile solutions and are frequently encountered in various applications, including three-phase electrical systems, electrical filters, and matching networks.
976
Resistance and Conductance01:25

Resistance and Conductance

509
A conductor's DC resistance at a given temperature is influenced by its resistivity, length, and cross-sectional area. Resistivity is an inherent property of the conductor material, with annealed copper serving as the international standard for measurement. For instance, the resistivity of hard-drawn aluminum at 20 degrees Celsius is 61% of the standard conductivity of annealed copper.
Various factors impact the resistance of a conductor. Spiraling in stranded conductors increases their...
509

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

MgO-Driven High-Entropy Engineering in (Bi<sub>0.5</sub>Na<sub>0.5</sub>)TiO<sub>3</sub>-Based Ceramics for Superior Energy Storage Performance.

ACS applied materials & interfaces·2026
Same author

High-Performance Energy Storage in Ba(Al<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub>-Modified (Bi<sub>0.5</sub>Na<sub>0.5</sub>)TiO<sub>3</sub>-Based Lead-Free Ceramics via High-Entropy Strategy.

ACS applied materials & interfaces·2025
Same author

Colossal Room-Temperature Ferroelectric Polarizations in SrTiO<sub>3</sub>/SrRuO<sub>3</sub> Superlattices Induced by Oxygen Vacancies.

Nano letters·2022
Same author

Improved energy storage performance of PbZrO<sub>3</sub> antiferroelectric thin films crystallized by microwave radiation.

RSC advances·2022
Same author

Emergent Ferroelectricity in Otherwise Nonferroelectric Oxides by Oxygen Vacancy Design at Heterointerfaces.

ACS applied materials & interfaces·2020
Same author

Ultrahigh-Energy Storage Properties of (PbCa)ZrO<sub>3</sub> Antiferroelectric Thin Films <i>via</i> Constructing a Pyrochlore Nanocrystalline Structure.

ACS nano·2020

Related Experiment Video

Updated: Jan 29, 2026

Measuring Light-Switching Behavior Using an Occupancy and Light Data Logger
05:50

Measuring Light-Switching Behavior Using an Occupancy and Light Data Logger

Published on: January 16, 2020

6.2K

Resistive Switching Behavior in Ferroelectric Heterostructures.

Zhan Jie Wang1,2, Yu Bai1,2

  • 1School of Material Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China.

Small (Weinheim an Der Bergstrasse, Germany)
|February 19, 2019
PubMed
Summary

Resistive random-access memory (RRAM) utilizes the resistive switching effect in ferroelectric heterostructures. Optimizing ferroelectricity and defects enhances RRAM performance for next-generation nonvolatile memory.

Keywords:
conductivityferroelectric heterostructuresferroelectricityresistive switching

More Related Videos

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.6K
Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.0K

Related Experiment Videos

Last Updated: Jan 29, 2026

Measuring Light-Switching Behavior Using an Occupancy and Light Data Logger
05:50

Measuring Light-Switching Behavior Using an Occupancy and Light Data Logger

Published on: January 16, 2020

6.2K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.6K
Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.0K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Electrical Engineering

Background:

  • Resistive random-access memory (RRAM) is a key technology for next-generation nonvolatile memory.
  • Information storage in RRAM relies on the resistive switching (RS) effect.
  • RS behavior in ferroelectric heterostructures is governed by polarization and defect mechanisms.

Purpose of the Study:

  • To introduce the RS mechanism in ferroelectric heterostructures.
  • To summarize recent methods for improving RS performance.
  • To identify challenges and future trends in RRAM.

Main Methods:

  • Investigating synergistic effects between polarization and defect mechanisms.
  • Optimizing ferroelectricity, conductivity, and interfacial structures.
  • Exploring techniques like doping, oxygen vacancy control, and insertion layers.

Main Results:

  • RS performance is significantly improved by optimizing material properties and interfaces.
  • Synergistic effects between polarization and defects enhance RS behavior.
  • Various methods effectively boost the performance of ferroelectric heterostructures.

Conclusions:

  • Understanding and optimizing RS mechanisms are crucial for advanced RRAM.
  • Continued research into material optimization and interface engineering will drive RRAM development.
  • Addressing current challenges will pave the way for future RRAM innovations.