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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
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Microreversibility, fluctuations, and nonlinear transport in transistors
1Center for Nonlinear Phenomena and Complex Systems, Université Libre de Bruxelles (U.L.B.), Campus Plaine, Code Postal 231, B-1050 Brussels, Belgium.
Physical Review. E
|February 21, 2019
Summary
This study introduces a stochastic model for charge transport in transistors, verifying their signal amplification. It also confirms the fluctuation theorem and Onsager reciprocal relations for transistor currents.
Area of Science:
- Physics
- Electrical Engineering
- Materials Science
Background:
- Understanding charge transport is crucial for transistor operation.
- Existing models may not fully capture stochastic effects in transistors.
Purpose of the Study:
- To develop a stochastic approach for modeling charge transport in transistors.
- To verify the signal amplifying effect and thermodynamic consistency of transistors.
- To analyze the statistical properties of coupled currents in transistors.
Main Methods:
- Utilizing diffusion-reaction stochastic differential equations for electron and hole densities.
- Solving the Poisson equation for the electric field.
- Applying full counting statistics to analyze coupled electric currents.
- Investigating fluctuation theorems and Onsager reciprocal relations.
Main Results:
- The stochastic approach successfully models charge transport and verifies transistor signal amplification.
- The fluctuation theorem holds for the joint probability distribution of coupled currents.
- Onsager reciprocal relations and their nonlinear generalizations are satisfied.
Conclusions:
- The proposed stochastic method provides a thermodynamically consistent framework for transistor charge transport.
- This approach offers new insights into the statistical mechanics of charge transport in electronic devices.
- The findings have implications for the design and analysis of advanced transistors.
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