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Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector
Arun Malla Chowdhury1, Greeshma Chandan1, Rohit Pant1
1Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India.
ACS Applied Materials & Interfaces
|February 22, 2019
Summary
This study demonstrates a self-powered photodetector using an InGaN/AlN/Si heterostructure. The device shows ultrafast response to UV-visible light without external power, paving the way for advanced optoelectronic applications.
Area of Science:
- Semiconductor Physics
- Optoelectronics
- Materials Science
Background:
- Photodetectors are crucial for light sensing applications.
- Developing self-powered devices eliminates the need for external power sources.
- Heterostructures offer tunable electronic and optical properties.
Purpose of the Study:
- To demonstrate a self-powered, broadband, and ultrafast photodetector.
- To investigate the photoresponse characteristics of an n+-InGaN/AlN/n-Si(111) heterostructure.
- To explore the relationship between open-circuit voltage and responsivity.
Main Methods:
- Fabrication of an n+-InGaN epilayer on an AlN/n-Si(111) substrate using plasma-assisted molecular beam epitaxy.
- Characterization of the photodetector's performance under UV-visible light illumination (300-800 nm).
- Measurement of key parameters including responsivity, rise time, and fall time.
Main Results:
- The n+-InGaN/AlN/n-Si(111) device exhibited excellent self-powered photoresponse.
- Maximum responsivity of 9.64 A/W was observed at 580 nm for low irradiance (0.1 mW/cm2).
- Ultrafast response times with rise and fall times of 19.9 μs and 21.4 μs were achieved.
Conclusions:
- The developed heterostructure is suitable for self-powered, ultrafast photodetector applications.
- Deep donor states near the InGaN/AlN interface influence the device's spectral response.
- A correlation between open-circuit voltage and responsivity was established.
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