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Updated: Jan 28, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Thermal-Assisted Vertical Electron Injections in Few-Layer Pyramidal-Structured MoS2 Crystals
Mei Er Pam1,2, Zibo Li3, Yee Sin Ang1,2
1Pillar of Engineering Product Development , Singapore University of Technology and Design , 8 Somapah Road , Singapore 487372 , Singapore.
Researchers explored charge conduction in chemical vapor deposition-grown molybdenum disulfide (MoS2) crystals. They discovered Richardson-Schottky emission, not Fowler-Nordheim tunneling, dominates vertical charge transport, crucial for MoS2 electronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Atomically thin two-dimensional (2D) materials, like molybdenum disulfide (MoS2), are vital for advanced electronics and optoelectronics.
- Understanding interlayer screening and charge transport is key, but largely unexplored in chemical vapor deposition (CVD)-grown MoS2.
Purpose of the Study:
- To investigate interlayer screening effects and charge conduction mechanisms in CVD-grown MoS2 crystals.
- To characterize controllable CVD-grown monolayer and pyramidal-structured MoS2 crystals.
Main Methods:
- Controlled synthesis of monolayer and pyramidal-structured MoS2 using CVD with an oxidized Mo foil precursor.
- Electrical measurements and analysis of vertical charge transport mechanisms.
Main Results:
- Demonstrated controllable CVD growth of MoS2 structures.
- Identified Richardson-Schottky (RS) emission as the dominant charge transport mechanism for bias voltages less than 1V.
- Showed that the Fowler-Nordheim (FN) tunneling model does not adequately explain the observed electrical behavior.
Conclusions:
- The study provides a fundamental understanding of charge conduction in CVD-grown MoS2.
- Findings challenge the applicability of the FN model for these specific MoS2 interfaces.
- The results are crucial for the future development of MoS2-based electronic and optoelectronic devices.
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