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    Area of Science:

    • Integrated photonics
    • Materials science
    • Optoelectronics

    Background:

    • Silicon nitride (SiN) is a leading CMOS-compatible platform for integrated photonics below 1 µm wavelength.
    • Developing fast electro-optic (EO) modulators for SiN platforms remains a significant challenge.
    • Existing SiN modulators lack plasma dispersion effects found in silicon, and efficient Pockels effect modulators are undemonstrated.

    Purpose of the Study:

    • To demonstrate efficient electro-optic (EO) modulation in silicon nitride (SiN) integrated photonics.
    • To overcome the limitations of current SiN-based modulator technologies.
    • To enable advanced functionalities in SiN photonic circuits.

    Main Methods:

    • Atomic layer deposition (ALD) of nonlinear crystals (zinc oxide, zinc sulfide) onto SiN waveguide circuits.
    • Integration of ALD-grown nonlinear materials as overlays on existing SiN photonic platforms.
    • Fabrication and characterization of EO modulators utilizing ring resonators.

    Main Results:

    • Successful back-end CMOS-compatible deposition of zinc oxide and zinc sulfide on SiN waveguides.
    • Demonstration of electro-optic (EO) modulation in SiN ring resonators using the deposited nonlinear crystals.
    • Overcoming the lack of plasma dispersion and Pockels effect in conventional SiN.

    Conclusions:

    • Atomic layer deposition (ALD) enables the integration of nonlinear optical materials with silicon nitride (SiN) photonics.
    • This approach facilitates the realization of fast electro-optic (EO) modulators in SiN.
    • The demonstrated technique is a significant step towards advanced SiN-based integrated optical systems.