Unusual properties and potential applications of strain BN-MS2 (M = Mo, W) heterostructures
Jie Su1, Jian He1, Junjing Zhang1
1China State Key Discipline Laboratory of Wide Band Gap Semiconductor Tecchnology, Shaanxi Joint Key Laboratory of Graphene, Advanced Interdisciplinary Research Center for Flexible Electronics, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Abstract:
Heterostructures receive intensive attentions due to their excellent intrinsic properties and wide applications. Here, we investigate the natural physical properties and performances of strain BN-MS2 (M = Mo, W) heterostructure by density functional theory. Different to compressive monolayer MS2, corresponding BN-MS2 heterostructures keep direct band-gap characters because effects of charge transfer on anti-bonding dz2 orbitals are stronger than those of Poisson effect. Mexican-hat-like bands without magnetic moments are observed at strain BN-MS2 heterostructures when the compression is enough. Consequently, electron mobilities of strain BN-MS2 heterostructures are slightly reduced at first and then enlarged with increasing compressive strain. Note that, strain BN-MS2 heterostructures reduce the band edges of MS2 layers and extend their application in photocatalytic water splitting. But just the n-type and p-type Schottky barriers of devices with strain BN-MS2 heterostructures are reduced and even vanished with the increasing tensile and compressive, respectively. Besides, electron mobilities of strain BN-MoS2 and BN-WS2 heterostructures can be enhanced to 1290 and 1926 cm2 V -1 s-1, respectively, with increasing tensile strain. Interestingly, the exciton binding energies of strain BN-MS2 heterostructures exhibit oscillation variations, different to those of strain monolayer MS2.
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