High performance planar germanium-on-silicon single-photon avalanche diode detectors
Peter Vines1, Kateryna Kuzmenko2, Jarosław Kirdoda3
1Institute of Photonics and Quantum Sciences, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, EH14 4AS, UK. p.vines@hw.ac.uk.
Nature Communications
|March 8, 2019
Summary
New germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) detectors offer improved short-wave infrared performance. These detectors advance ultra-sensitive measurements for applications like automotive LIDAR and quantum technologies.
Area of Science:
- Optoelectronics
- Semiconductor physics
- Photonics
Background:
- Single-photon detection is crucial for ultra-sensitive measurements of fast optical signals.
- Semiconductor detectors in the short-wave infrared (SWIR) often underperform compared to silicon devices at shorter wavelengths.
- Existing SWIR single-photon avalanche diode (SPAD) technologies face limitations in efficiency and noise.
Purpose of the Study:
- To develop a new generation of planar germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) detectors for enhanced SWIR operation.
- To significantly improve the performance metrics of SWIR single-photon detectors.
- To explore the potential of Ge-on-Si technology for advanced applications.
Main Methods:
- Fabrication of planar germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) devices.
- Characterization of detector performance, including single-photon detection efficiency (SPDE) and noise equivalent power (NEP).
- Comparative analysis against existing mesa-geometry SPADs and InGaAs/InP devices.
Main Results:
- Demonstrated a single-photon detection efficiency of 38% at 125 K and 1310 nm wavelength.
- Achieved a fifty-fold improvement in noise equivalent power compared to optimized mesa-geometry SPADs.
- Observed significantly reduced afterpulsing effects compared to InGaAs/InP devices.
Conclusions:
- The planar Ge-on-Si SPAD platform offers a substantial advancement in SWIR single-photon detection.
- This technology provides a viable pathway for creating large arrays of efficient, high-data-rate SWIR detectors.
- Potential applications include eye-safe automotive LIDAR and quantum information technologies.
Related Concept Videos
High-Performance Liquid Chromatography: Types of Detectors
1.7K
The role of the detectors in High-Performance Liquid Chromatography (HPLC) is to analyze the solutes as they exit from the chromatographic column. The detector recognizes the solute's property and generates corresponding electrical signals, which are converted into a readable graph of the detector's response versus elution time called a chromatogram at the computer. There are several types of HPLC detectors, each with its own advantages and limitations, depending on the analyte...
1.7K
Crystal Field Theory - Tetrahedral and Square Planar Complexes
48.4K
Tetrahedral Complexes
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
48.4K
Zener Diodes
1.2K
Zener diodes are specialized semiconductor devices designed to operate in the reverse breakdown region, where they allow current to flow into the cathode, making it positive relative to the anode. This reverse operation distinguishes Zener diodes from conventional diodes and enables their use in various applications, most notably as voltage regulators. One of the defining characteristics of Zener diodes is their nearly vertical I-V (current-voltage) characteristic curve above a certain...
1.2K
The Ideal Diode
2.2K
A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...
2.2K
Diode: Forward bias
2.1K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
The behavior of a diode in forward bias...
2.1K
Modeling of Diode Forward Characteristics
1.1K
Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
1.1K


