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Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition
Yulin Feng1, Peng Huang2, Zheng Zhou1
1Institute of Microelectronics, Peking University, Beijing, 100871, China.
Nanoscale Research Letters
|March 13, 2019
Summary
This study investigates Ruthenium-based resistive random-access memory (RRAM) devices. Researchers observed and explained negative differential resistance (NDR) during the set process, linking it to oxygen vacancy recombination.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Resistive random-access memory (RRAM) is a promising non-volatile memory technology.
- Understanding the physical mechanisms of resistive switching is crucial for device optimization.
- Atomic layer deposition (ALD) enables precise control over functional layers in RRAM devices.
Purpose of the Study:
- To fabricate and investigate Ruthenium (Ru)-based RRAM devices incorporating an atomic layer deposited AlOy/HfOx functional layer.
- To explore the physical origin of the observed negative differential resistance (NDR) behavior during the voltage set process.
Main Methods:
- Fabrication of Ru-based RRAM devices with ALD-deposited AlOy/HfOx.
- Electrical characterization to observe and analyze device performance.
- X-ray photoelectron spectroscopy (XPS) for material analysis.
Main Results:
- Observation of negative differential resistance (NDR) during the voltage set process in Ru-based RRAM devices.
- The NDR behavior is attributed to a partially unipolar reset effect.
- Recombination of oxygen vacancies with thermally released oxygen ions from the RuO2 interface layer is identified as the cause.
Conclusions:
- The study provides a physical explanation for the NDR phenomenon in Ru-based RRAM devices.
- The findings are supported by electrical characteristics and XPS analysis.
- This understanding can guide the design of improved RRAM devices.
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