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Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure

Jie Yu1,2, Xiaoxin Xu3, Tiancheng Gong1

  • 1Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.

Nanoscale Research Letters
|March 30, 2019
PubMed

Keywords:
Bi-layer structureCMOS-compatible processConductive bridge resistive switching memory (CBRAM)Reliability

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