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Updated: Jan 27, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory

Yue Peng1, Genquan Han2, Wenwu Xiao3

  • 1State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.

Nanoscale Research Letters
|April 3, 2019
PubMed

Keywords:
FeFETFerroelectricGermaniumMemoryNCNEI

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