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Engineering High- k/SiGe Interface with ALD Oxide for Selective GeO x Reduction.

Mahmut S Kavrik, Peter Ercius1, Joanna Cheung

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Alumina (Al2O3) insertion into hafnium oxide (HfO2) gate dielectrics suppresses electronic defects at SiGe interfaces. This process forms a protective silicon oxide (SiOx) layer, crucial for advanced complementary metal-oxide-semiconductor (CMOS) technology.

Keywords:
Al2O3HfO2 interface trap chargeSiGe CMOSatomic layer depositionhigh-k dielectricshigh-mobility transistorlow-power electronics

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Nanotechnology

Background:

  • High-mobility SiGe channels are essential for next-generation complementary metal-oxide-semiconductor (CMOS) technology.
  • Electronic defects at the high-k gate oxide/SiGe interface, particularly those induced by GeOx, hinder device performance.
  • An SiO(x)-rich interlayer is known to reduce interface defect density, but the mechanism involving Al(2)O(3) and HfO(2) remains unclear.

Purpose of the Study:

  • To investigate the mechanism by which Al(2)O(3) insertion into HfO(2) gate oxides reduces defect density at the Al(2)O(3)/SiGe interface.
  • To understand the role of Al(2)O(3) in forming a low-defect interface for advanced CMOS applications.

Main Methods:

  • Atomic Layer Deposited (ALD) Al(2)O(3) was inserted into or on top of ALD HfO(2) gate oxides on SiGe.
  • Defect density was quantified using impedance measurements.
  • Interface chemical and physical structures were analyzed using high-resolution scanning transmission electron microscopy (HR-STEM) and electron energy loss spectroscopy (EELS).

Main Results:

  • Compositional analysis confirmed an SiO(x)-rich interlayer at both Al(2)O(3)/SiGe and HfO(2)/SiGe interfaces upon Al(2)O(3) insertion.
  • The results indicate that Al(2)O(3) insertion promotes the decomposition of GeO(x) at the interface, forming a passivating SiO(x) layer.
  • Nanolaminate gate oxide chemistry is complex, involving precursor diffusion and reaction during ALD, not just layer-by-layer deposition.

Conclusions:

  • Al(2)O(3) insertion effectively suppresses electronic defects at the SiGe interface by inducing GeO(x) decomposition and forming an SiO(x)-rich layer.
  • Remote ALD (oxide ALD on top of the gate oxide) is a viable strategy to mitigate interface defects in scaled CMOS devices via oxygen scavenging.
  • The findings highlight the importance of understanding diffusion and reaction mechanisms in ALD for optimizing gate stack engineering.