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High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3

Yan Shao1, Xiaohan Wu1, Mei-Na Zhang1

  • 1School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China.

Nanoscale Research Letters
|April 4, 2019
PubMed

Keywords:
Amorphous In-Ga-Zn-OAtomic layer depositionHydrogen-rich Al2O3Room temperatureThin-film transistor

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