Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices.

Area of Science:

• Materials Science
• Nanotechnology
• Electronics

Background:

• Nonvolatile resistive switching memory devices are crucial for advanced electronics.
• Developing materials for multi-bit data storage remains a key challenge.
• Graphene oxide (GO) and PBD nanocomposites show promise for memory applications.

Purpose of the Study:

• To fabricate and characterize a tristable memory device with a novel trilayer structure.
• To investigate the resistive switching behaviors of devices with single and double GO@PBD nanocomposite films.
• To explore the potential of this architecture for multi-bit data storage.

Main Methods:

• Fabrication of devices with single and double GO@PBD nanocomposite films embedded in PMMA layers.
• Characterization of nonvolatile resistive switching behaviors.
• Analysis of charge transport mechanisms using I-V fitting curves and energy-band diagrams.

Main Results:

• Devices with single GO@PBD films exhibited binary resistive switching.
• Devices with double GO@PBD films demonstrated ternary resistive switching.
• The trilayer heterostructure (GO@PBD/PMMA/GO@PBD) showed enhanced tristable memory properties.

Conclusions:

• The novel trilayer structure significantly enhances tristable memory properties.
• Graphene-based memory devices with this architecture are suitable for memristic applications.
• This innovative design offers a new scheme for multi-bit data storage using charge trap materials.