Tunable Memristic Characteristics Based on Graphene Oxide Charge-Trap Memory.

Area of Science:

• Materials Science
• Nanotechnology
• Electronics

Background:

• Nonvolatile memory devices are crucial for modern electronics.
• Solution-processable materials offer advantages for large-area device fabrication.
• Graphene oxide (GO) and polymethyl methacrylate (PMMA) are promising materials for electronic applications.

Purpose of the Study:

• To develop and investigate solution-processable nonvolatile memory devices.
• To tune memristive behavior by controlling graphene oxide (GO) content in a polymethyl methacrylate (PMMA) matrix.
• To understand the charge-trap memory mechanism in Ni/PMMA:GO/Indium tin oxide (ITO) devices.

Main Methods:

• Manufacturing of Ni/PMMA:GO/ITO sandwiched structures with varying GO content.
• Characterization using transmission electron microscopy (TEM), scanning electron microscopy (SEM), FTIR, Raman spectroscopy, TGA, XRD, UV-Vis, and fluorescence spectroscopy.
• Analysis of memristive performance and resistive switching behavior.

Main Results:

• Memristive conductance behavior was controllably tuned by varying GO content in PMMA nanocomposite films.
• Bipolar tunable memristive behaviors were observed, originating from charges trapped in GO.
• PMMA:GO composites showed potential for large-area device applications due to superior electronic properties and ease of modification.

Conclusions:

• Graphene oxide embedded in PMMA is a viable approach for creating tunable, solution-processable nonvolatile memory devices.
• The resistive switching mechanism is attributed to charge trapping in GO, enabling controllable memristive properties.
• These PMMA:GO composites offer a promising platform for advanced electronic memory applications.