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A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors
Woo Young Choi1, Gyuhan Yoon2, Woo Young Chung3
1Department of Electronics Engineering, Sogang University, Seoul 04107, Korea. wchoi@sogang.ac.kr.
Abstract:
A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage capacitor with a complex three-dimensional structure.
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