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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel

Shashi K Dargar1, Viranjay M Srivastava1

  • 1Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban, 4041, South Africa.

Heliyon
|April 23, 2019
PubMed

Keywords:
Electrical engineering

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