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Simulation of Radiation Damage for Silicon Drift Detector
Yang Liu1,2, Tengfei Zhu3, Jianxi Yao4
1School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, China. yliu@ncepu.edu.cn.
Sensors (Basel, Switzerland)
|April 25, 2019
Summary
This study investigates radiation damage in silicon drift detectors (SDD) for deep space. Geant4 simulations show neutrons cause uniform damage, while gamma rays
Area of Science:
- Nuclear Physics
- Detector Physics
- Space Science
Background:
- Silicon drift detectors (SDD) are crucial for deep space detection due to their high sensitivity and energy resolution.
- Performance degradation of SDDs in deep space environments is a significant concern.
Purpose of the Study:
- To investigate the radiation damage effects and mechanics on silicon drift detectors (SDD) in a deep-space environment.
- To analyze displacement and ionization damage from neutron and gamma irradiations.
Main Methods:
- Utilized Geant4 simulation to model radiation damage.
- Investigated irradiations with different energies of neutrons and gammas.
- Analyzed recoil atom distribution, energy, and secondary particle interactions.
Main Results:
- Neutron irradiation results in a uniform recoil atom distribution with low energy deposition.
- Gamma irradiation shows linear energy deposition with detector thickness.
- Secondary electron yield decreases as scattering angle increases.
Conclusions:
- Neutron and gamma radiation induce distinct damage mechanisms in SDDs.
- Detector epitaxial thickness is a critical parameter for anti-irradiation design.
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