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Published on: October 15, 2015
Spin-Orientation-Dependent Topological States in Two-Dimensional Antiferromagnetic NiTl2S4 Monolayers
Jian Liu1,2, Sheng Meng1,2,3,4, Jia-Tao Sun1,5
1Beijing National Laboratory of Condensed Matter Physics , and Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China.
Topological states in 2D antiferromagnets are demonstrated by manipulating spin orientation. The NiTl2S4 monolayer exhibits quantum anomalous Hall and quantum spin Hall effects, paving the way for topological spintronics.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Topological states of matter arise from nontrivial magnetic configurations, offering insights into material properties.
- Active control of spin orientation is crucial for studying topological states but is rare in 2D materials.
Purpose of the Study:
- To demonstrate spin-orientation-dependent topological states in a geometrically frustrated 2D antiferromagnet.
- To explore the potential of NiTl2S4 monolayer for realizing novel topological phenomena.
Main Methods:
- First-principles calculations were employed to investigate the electronic and magnetic properties of the NiTl2S4 monolayer.
- Spin orientation was systematically varied to identify different topological states.
Main Results:
- The NiTl2S4 monolayer exhibits tunable topological states, including the quantum anomalous Hall (QAH) effect and time-reversal-symmetry (TRS) broken quantum spin Hall (QSH) effect.
- A dilated nc-AFM NiTl2S4 monolayer shows the QAH effect with a record Chern number of -4.
- A novel state with coexisting QAH and TRS broken QSH effects was discovered under tunable chemical potential (Chern number = 3, spin Chern number = 1).
Conclusions:
- The study presents a promising concept for topological spintronics in 2D antiferromagnets by controlling spin orientation.
- The NiTl2S4 monolayer serves as a potential material platform for realizing advanced spintronic devices.
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