Impact of Ferroelectric Capacitor's Electrode Area on the Performance of Negative Capacitance Field Effect Transistor

To overcome the Boltzmann limit of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), negative (differential) capacitance FET (NCFET) has been under development since 2008. NCFET enables to implement the internal amplification of gate voltage, resulting in a high on/off-current ratio, and good compatibility with current CMOS technology. The hysteresis window of NCFET, however, is the conspicuous obstacle for its commercialization (especially, for CMOS logic device application). It is well known that there are various factors, which affect the hysteresis window of NCFET, such as the thickness of ferroelectric capacitor, the kinds of ferroelectric material, etc. While the thickness of ferroelectric capacitor and the kinds of ferroelectric material have been widely studied, the impact of ferroelectric capacitor's electrode area on the performance of NCFET has never been investigated. In this work, the aforementioned impact is analyzed with preliminary experiment data.