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Tunnel Field Effect Transistor with Ferroelectric Gate Insulator.
Kitae Lee1, Junil Lee1, Sihyun Kim1
1Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.
Journal of Nanoscience and Nanotechnology
|April 28, 2019
Summary
Ferroelectric tunnel field effect transistors (Fe-TFETs) show better performance than conventional TFETs. Inserting ferroelectric materials boosts the on-current, improving device efficiency.
Area of Science:
- Solid State Physics
- Materials Science
- Semiconductor Devices
Background:
- Conventional tunnel field-effect transistors (c-TFETs) face limitations in achieving high on-current.
- The integration of novel materials in gate insulators is a key area for device performance enhancement.
Purpose of the Study:
- To propose and investigate a ferroelectric tunnel field-effect transistor (Fe-TFET) with improved DC performance.
- To explore the impact of ferroelectric materials on TFET characteristics.
Main Methods:
- Technology computer-aided design (TCAD) simulations were employed for device investigation.
- Analysis of the on-current enhancement mechanism in Fe-TFETs.
Main Results:
- Fe-TFETs demonstrate significantly improved DC performance compared to c-TFETs.
- Enhanced on-current (Ion) was achieved by incorporating ferroelectric material into the gate insulator.
- The capacitance boosting effect due to ferroelectric polarization was identified as the primary cause for performance improvement.
Conclusions:
- The proposed Fe-TFET design offers a viable pathway to enhanced transistor performance.
- Ferroelectric materials are effective in boosting the on-current of TFETs through capacitance enhancement.
- Further investigation into optimal ferroelectric material characteristics for Fe-TFETs is warranted.
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