Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward Current

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Updated: Jan 25, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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Jong-Ho Bae1, Suhwan Lim1, Dongseok Kwon1

  • 1Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea.

Journal of Nanoscience and Nanotechnology
|April 28, 2019
PubMed

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