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Silicon-on-Insulator Double-Gate Ion-Sensitive Field-Effect Transistors Using Flexible Paper Substrate-Based Extended

Jin-Hyeok Jeon1, Won-Ju Cho1

  • 1Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.

Journal of Nanoscience and Nanotechnology
|April 28, 2019
PubMed
Summary

We created cost-effective, disposable ion-sensitive field-effect transistors (ISFETs) using paper extended gates. These novel sensors achieve ultra-high pH sensitivity, exceeding theoretical limits, and demonstrate stable performance for long-term biosensing applications.

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