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Updated: Jan 25, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random

Seung Ik Oh1, In Hyuk Im2, Chanyoung Yoo3

  • 1Department of Materials Science and Engineering, Seoul National University of Science and Technology (Seoultech), Seoul 01811, Korea. kg5176@naver.com.

Micromachines
|May 1, 2019
PubMed

Keywords:
Johnson–Mehl–Avrami kineticscrystallization behaviorelectrode interfacial layer effectphase change random access memory

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