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Updated: Jan 25, 2026
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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
680
Editorial for the Special Issue on Miniaturized Transistors
Lado Filipovic1, Tibor Grasser2
1Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Vienna, Austria. filipovic@iue.tuwien.ac.at.
Micromachines
|May 5, 2019
Summary
Complementary Metal Oxide Semiconductor (CMOS) technology drives innovation in electronics. Advanced CMOS fabrication techniques are crucial for developing next-generation semiconductor devices.
Area of Science:
- Semiconductor Physics and Materials Science
- Electrical Engineering and Microelectronics
Background:
- Complementary Metal Oxide Semiconductor (CMOS) devices represent a cornerstone of modern electronics.
- Rapid advancements in CMOS fabrication techniques have fueled significant technological progress.
Discussion:
- The study explores the foundational principles and manufacturing processes behind CMOS technology.
- It highlights the scalability and efficiency inherent in current CMOS fabrication methods.
Key Insights:
- CMOS technology's versatility enables its application across diverse electronic systems.
- Innovations in fabrication are critical for meeting the increasing demands for performance and miniaturization.
Outlook:
- Future research will focus on overcoming the physical limitations of silicon-based CMOS.
- Exploring novel materials and architectures is essential for continued advancement in semiconductor technology.
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