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Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers
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Proximity Gettering Design of Hydrocarbon⁻Molecular⁻Ion⁻Implanted Silicon Wafers Using Dark Current Spectroscopy for

Kazunari Kurita1, Takeshi Kadono2, Satoshi Shigematsu3

  • 1SUMCO Corporation, 1-52 Kubara, Yamashiro-cho, Imari-shi, Saga 849-4256, Japan. k-kurita@sumcosi.com.

Sensors (Basel, Switzerland)
|May 8, 2019
PubMed

Keywords:
CMOS image sensordark currentdark current spectroscopygetteringmetal impuritysilicon waferwhite spot defects

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