Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random-Access Memory Studied via Electrically Detected
D J McCrory1, P M Lenahan1, D M Nminibapiel2
1Pennsylvania State University, University Park, PA 16802 USA.
IEEE Transactions on Nuclear Science
|May 14, 2019
Summary
Gamma irradiation dramatically alters electrically detected magnetic resonance (EDMR) in resistive random access memory (RRAM) devices. This study reveals radiation-induced changes in electrically active defects crucial for RRAM electronic transport.
Area of Science:
- Materials Science
- Solid State Physics
- Device Physics
Background:
- Resistive Random Access Memory (RRAM) devices are crucial for modern electronics.
- Understanding defect behavior is key to improving RRAM performance and reliability.
- Electrically Detected Magnetic Resonance (EDMR) is a powerful technique for probing electrically active defects.
Purpose of the Study:
- To investigate the impact of gamma irradiation on defects in TiN/Ti/HfO2/TiN RRAM devices.
- To characterize the nature of radiation-induced defects using EDMR.
- To correlate defect changes with electronic transport mechanisms in RRAM.
Main Methods:
- Utilized Electrically Detected Magnetic Resonance (EDMR) spectroscopy.
- Performed EDMR measurements on TiN/Ti/HfO2/TiN RRAM devices before and after gamma irradiation.
- Analyzed the EDMR response, including g-value and signal intensity.
Main Results:
- Observed a significant increase in the EDMR response after gamma irradiation.
- The EDMR signal exhibited an isotropic g-value of 2.001 ± 0.0003.
- Tentatively attributed the EDMR response to spin-dependent trap-assisted tunneling (SDTAT) at O2- centers coupled to hafnium ions.
Conclusions:
- Gamma irradiation induces detectable changes in electrically active defects within RRAM devices.
- EDMR effectively identifies radiation-induced alterations in charge transport defects.
- This research provides insights into atomic-scale defects influencing electronic transport in RRAM systems.
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