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Updated: Jan 24, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Tuning Electronic Properties of Blue Phosphorene/Graphene-Like GaN van der Waals Heterostructures by Vertical
Jingjing Guo1, Zhongpo Zhou2, Hengheng Li1
1Henan Key Laboratory of Photovoltaic Materials, and School of Physics and Materials Science, Henan Normal University, Xinxiang, 453007, China.
Abstract:
The structural and electronic properties of a monolayer and bilayer blue phosphorene/graphene-like GaN van der Waals heterostructures are studied using first-principle calculations. The results show that the monolayer-blue phosphorene/graphene-like GaN heterostructure is an indirect bandgap semiconductor with intrinsic type II band alignment. More importantly, the external electric field tunes the bandgap of monolayer-blue phosphorene/graphene-like GaN and bilayer-blue phosphorene/graphene-like GaN, and the relationship between bandgap and external electric field indicates a Stark effect. The semiconductor-to-metal transition is observed in the presence of a strong electric field.
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