Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe2 Heterostructure

Junhong Na1,2, Youngwook Kim1, Jurgen H Smet1

  • 1Max Planck Institute for Solid State Research , Heisenbergstrasse 1 , D-70569 Stuttgart , Germany.

Summary

This study introduces a new tunneling field-effect transistor (TFET) using black phosphorus-tin diselenide (BP-SnSe2) heterostructures. These devices exhibit tunable Esaki diode and backward diode behaviors for low-power electronics.

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