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Published on: March 17, 2023
Tuning the Polarity of MoTe2 FETs by Varying the Channel Thickness for Gas-Sensing Applications
Asha Rani1, Kyle DiCamillo2, Md Ashfaque Hossain Khan3
1School of Engineering and Applied Science, The George Washington University, Washington, DC 20052, USA. arani@gwmail.gwu.edu.
Abstract:
In this study, electrical characteristics of MoTe2 field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe2 crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe2 channel thickness from 10.6 nm to 56.7 nm. This change in flake-thickness-dependent conducting behavior of MoTe2 FETs can be attributed to modulation of the Schottky barrier height and related bandgap alignment. Change in polarity as a function of channel thickness variation is also used for ammonia (NH3) sensing, which confirms the p- and n-type behavior of MoTe2 devices.
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