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High-stability pH sensing with a few-layer MoS2 field-effect transistor.

Honglei Wang1, Peng Zhao1,2, Xuan Zeng3

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Few-layer molybdenum disulfide (MoS2) field-effect transistor (FET) biosensors show highly stable and repeatable real-time pH sensing. These novel biosensors achieve near-ideal pH sensitivity, demonstrating potential for advanced sensing applications.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemical Sensing

Background:

  • Molybdenum disulfide (MoS2) is an emerging two-dimensional material with unique properties making it suitable for biosensor applications.
  • Field-effect transistors (FETs) based on MoS2 offer potential for ultra-sensitive detection due to their semiconducting nature and layered structure.

Purpose of the Study:

  • To develop and evaluate highly stable and repeatable real-time pH sensing using few-layer MoS2 FET biosensors.
  • To compare the performance of MoS2 FETs with different gate dielectrics (HfO2 and Al2O3/HfO2) for pH sensing.

Main Methods:

  • Fabrication of few-layer MoS2 FET biosensors on SiO2/Si substrates using exfoliated MoS2 flakes.
  • Integration of HfO2 and Al2O3/HfO2 gate dielectrics.
  • Real-time pH sensing measurements to evaluate linearity, stability, repeatability, and sensitivity.

Main Results:

  • Both HfO2 and Al2O3/HfO2 based sensors exhibited highly linear, stable, and repeatable responses across a wide pH range, approaching the theoretical pH sensitivity limit (59.6 mV pH-1).
  • The Al2O3/HfO2 sensor, operating in the subthreshold regime, demonstrated significantly higher current sensitivity (~105-fold) and better linearity compared to the HfO2 sensor.
  • The HfO2 sensor showed relatively higher stability and repeatability.
  • The Al2O3/HfO2-coated MoS2 FET achieved a low detection limit of 0.01 pH.

Conclusions:

  • Few-layer MoS2 FETs are highly effective for stable and repeatable real-time pH sensing.
  • The choice of gate dielectric influences sensor performance, with Al2O3/HfO2 offering superior current sensitivity and linearity, while HfO2 provides better stability and repeatability.
  • MoS2 FETs hold significant promise for developing ultra-sensitive biosensing platforms.