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Transport gap in SmB6 protected against disorder
Yun Suk Eo1, Alexa Rakoski2, Juniar Lucien2
1Department of Physics, University of Michigan, Ann Arbor, MI 48109-1040; eohyung@umich.edu zfisk@uci.edu.
Abstract:
The inverted resistance method was used in this study to extend the bulk resistivity of [Formula: see text] to a regime where the surface conduction overwhelms the bulk. Remarkably, regardless of the large off-stoichiometric growth conditions (inducing disorder by samarium vacancies, boron interstitials, etc.), the bulk resistivity shows an intrinsic thermally activated behavior that changes ∼7-10 orders of magnitude, suggesting that [Formula: see text] is an ideal insulator that is immune to disorder.
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