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Josephson Field-Effect Transistors Based on All-Metallic Al/Cu/Al Proximity Nanojunctions
Giorgio De Simoni1, Federico Paolucci1,2, Claudio Puglia1,3
1NEST Istituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy.
ACS Nano
|June 28, 2019
Summary
We demonstrate all-metallic Josephson transistors controlled by electric fields. These devices show suppressed supercurrent with gate voltage, suggesting a general mechanism for superconducting correlations.
Area of Science:
- Condensed Matter Physics
- Materials Science
Background:
- Superconductor-normal metal-superconductor (SNS) Josephson junctions are crucial for quantum electronics.
- Field-effect control in superconductors is challenging due to screening effects.
Purpose of the Study:
- To demonstrate and characterize all-metallic SNS Josephson transistors (SNS-FETs) with electric field tunability.
- To investigate the fundamental mechanism of field-effect suppression of critical current in proximity-induced superconductors.
Main Methods:
- Fabrication of mesoscopic all-metallic SNS-FETs.
- Electrical characterization from critical temperature (Tc) down to 50 mK.
- Application of static electric fields via lateral gate electrodes and magnetic fields.
Main Results:
- Demonstrated suppression of critical current (Is) by static electric fields for both positive and negative gate voltages.
- Achieved Is suppression to approximately one-third of its initial value, saturating at high gate voltages.
- Measured transconductance values as high as 100 nA/V at 100 mK.
Conclusions:
- The observed electric field effect is general, relying on superconducting correlations rather than a strict pairing potential.
- All-metallic SNS-FETs offer a new class of materials for implementing field-effect transistors using synthetic proximity-induced superconductors.
Keywords:
Josephson effectelectric field-effectgated superconductormetallic transistorsuperconducting electronicssuperconducting proximity effectsupercurrent transistorMore Related Videos
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