Tunable Giant Anomalous Hall Angle in Perpendicular Multilayers by Interfacial Orbital Hybridization

Area of Science:

• Spintronics
• Condensed Matter Physics
• Materials Science

Background:

• Spintronic devices based on the spin-dependent Hall effect offer potential for multivalue storage and logic gates, crucial for big data challenges.
• Integrating spintronic devices into semiconductor circuits is hindered by low anomalous Hall angles (θ) below 5% at room temperature (RT).

Purpose of the Study:

• To develop a spintronic device with a significantly enhanced anomalous Hall angle (θ) at room temperature.
• To investigate a simple perpendicular multilayered structure for improved spintronic device performance.

Main Methods:

• Fabrication of a simple perpendicular multilayered structure.
• Characterization of the anomalous Hall angle (θ) at room temperature and across a wide temperature range (250-350 K).

Main Results:

• Achieved an anomalous Hall angle (θ) up to 5.1% at room temperature (RT).
• Demonstrated a wide working temperature range (250-350 K), including RT.
• Attributed the giant Hall angle to enhanced side-jump scattering at an atomic-scale-modified interfacial structure.

Conclusions:

• The developed multilayered structure significantly enhances the anomalous Hall angle at RT, overcoming previous limitations.
• The wide working temperature range and high Hall angle are practically significant for spintronic memory applications.
• This work paves the way for 3D spintronic devices with ultrahigh storage density and ultralow power consumption based on the spin-dependent Hall effect.