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Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Zongjie Shen1,2, Yanfei Qi1,3, Ivona Z Mitrovic2

  • 1Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.

Micromachines
|July 5, 2019
PubMed

Keywords:
annealing temperaturesbipolar resistive switching characteristicsresistive random access memory (RRAM)solution-based dielectric

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