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Updated: Jan 22, 2026

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
Published on: September 5, 2019
Strain modulated nanostructure patterned AlGaN-based deep ultraviolet multiple-quantum-wells for polarization control
Houqiang Xu1,2, Hanling Long3, Jie'an Jiang1,2,4
1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, Zhejiang, People's Republic of China.
Strain-modulated nanostructures in deep ultraviolet (DUV) multiple-quantum-wells (MQWs) significantly boost light emission and polarization. Compressive strain further enhances performance, promising efficient DUV optoelectronic devices.
Area of Science:
- Materials Science
- Optoelectronics
- Solid State Physics
Background:
- AlGaN-based deep ultraviolet (DUV) multiple-quantum-wells (MQWs) are crucial for optoelectronic devices.
- Enhancing light extraction efficiency (LEE) and degree of polarization (DOP) remains a key challenge.
Purpose of the Study:
- To investigate the impact of strain-modulated nanostructures on the optical properties of AlGaN-based DUV-MQWs.
- To optimize DUV-MQWs for improved LEE and DOP, particularly for transverse electric (TE) mode emission.
Main Methods:
- Fabrication of strain-modulated nanostructure patterned DUV-MQWs.
- Experimental examination of optical behaviors, including photoluminescence, DOP, and LEE.
- Analysis of the influence of Al composition and biaxial strains (compressive and tensile).
Main Results:
- Nanostructure patterned MQWs exhibited three times higher photoluminescence compared to planar structures.
- Significant improvement in DOP, from -0.43 to -0.16, was observed.
- Compressive strains in nanostructure patterned MQWs led to higher DOP and LEE than tensile strains, facilitating TE mode emission.
Conclusions:
- The combination of compressive in-plane strain and surface nanostructures offers a novel approach for enhancing TE mode emission in DUV-MQWs.
- This strategy demonstrates significant advantages for the design and optimization of highly efficient polarized DUV optoelectronic devices.
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