Related Experiment Video
Updated: Jan 21, 2026

Modified Drop Tower Impact Tests for American Football Helmets
Published on: February 19, 2017
Relative age and maturation selection biases in academy football
Megan Hill1, Sam Scott2, Robert M Malina3
1Department for Health, University of Bath , Bath, UK.
Abstract:
This study examined the simultaneous effects of relative age and biological maturity status upon player selection in an English professional soccer academy. A total of 202 players from the U9 to U16 age groups, over an eight-year period (total of 566 observations), had their relative age (birth quarter) and biological maturity (categorised as late, on-time or early maturing based upon the Khamis-Roche method of percentage of predicted adult height at time of observation) recorded. Players born in the first birth quarter of the year (54.8%) were over-represented across all age groups. A selection bias towards players advanced in maturity status for chronological age emerged in U12 players and increased with age; 0% of players in the U15 and U16 age group were categorised as late maturing. A clear maturity selection bias for early maturing players was, however, only apparent when the least conservative criterion for estimating maturity status was applied (53.8% early and 1.9% late maturing in the U16 age group). Professional football academies need to recognise relative age and maturation as independent constructs that exist and operate independently. Thus, separate strategies should perhaps be designed to address the respective selection biases, to better identify, retain and develop players.
Related Concept Videos
Confirmation Biases
Hindsight Biases
Bias
In statistics, a sampling bias is created when a sample is collected from a population, and some members of the population are not as likely to be chosen as others (remember, each member...
Diode: Forward bias
The behavior of a diode in forward bias...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

