Lasing action in low-resistance nanolasers based on tunnel junctions

Area of Science:

• Optoelectronics
• Nanotechnology
• Semiconductor Devices

Background:

• Conventional nanolaser diodes often suffer from high resistance and threshold voltage due to p-type contact materials.
• Efficient charge injection and heat management are critical challenges in nanoscale laser design.

Purpose of the Study:

• To demonstrate lasing action in a novel nanolaser incorporating a tunnel junction.
• To reduce device resistance and threshold voltage by replacing p-type contacts with a heavily doped tunnel junction.
• To investigate the potential for improved thermal performance and higher operating temperatures.

Main Methods:

• Experimental fabrication of a nanolaser device featuring a heavily doped tunnel junction for hole injection.
• Characterization of device performance using light output versus injection current (L-I) measurements.
• Verification of lasing behavior through second-order coherence function measurements.

Main Results:

• Successful demonstration of lasing action in the new nanolaser design.
• Significant reduction in device resistance and threshold voltage from 5 V to approximately 0.95 V at 77 K.
• Operation at temperatures up to 180 K under continuous-wave (CW) pumping due to reduced Joule heating.

Conclusions:

• The integration of heavily doped tunnel junctions offers a viable strategy for enhancing nanolaser performance.
• This approach significantly lowers operational voltage and improves thermal management, enabling higher operating temperatures.
• The findings suggest potential applications in advanced nanoscale cavity designs requiring efficient heat dissipation.