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Crystal structure and electrical resistance property of Rb0.21(H2O) WS2
Yuanlv Mao1, Yuqiang Fang1, Dong Wang1
1State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
Abstract:
Rb0.21(H2O) WS2, rubidium hydrate di-thio-tungstate, is a new quasi two-dimensional sulfide. Its crystal structure consists of ordered WS2 layers, separated by disordered Rb+ ions and water mol-ecules. All atomic sites are located on mirror planes. The WS2 layers are composed of edge-sharing [WS6] octa-hedra and extend parallel to (001). The presence of structural water was revealed by thermogravimetry, but the position and exact amount could not be determined in the present study. The temperature dependence of the electrical resistance indicates that Rb0.21(H2O) WS2 is semiconducting between 80-300 K.
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