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Updated: Jan 20, 2026

A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires
Published on: January 21, 2016
Monolithic Integration of Silicon Nanowire Networks as a Soft Wafer for Highly Stretchable and Transparent
Taige Dong1, Ying Sun1, Zhimin Zhu1
1National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China.
Abstract:
Assembling nanoscale building blocks into an orderly network with a programmable layout and channel designs represents a critical capability to enable a wide range of stretchable electronics. Here, we demonstrate the growth-in-place integration of silicon nanowire (SiNW) springs into highly stretchable, transparent, and quasicontinuous functional networks with a close to unity interconnection among the discrete electrode joints because of a unique double-lane/double-step guiding edge design. The SiNW networks can be reliably transferred to a soft elastomer substrate, conformally attached to highly curved surfaces, or deployed as self-supporting/movable membranes suspended over voids. A high stretchability of >40% is achieved for the SiNW network on an elastomer, which can be employed as a transparent and semiconducting thin-film material endowed with a high carrier mobility of >50 cm2/(V s), Ion/Ioff ratio >104, and a tunable transmission of >80% over a wide spectrum range. Reversibly stretchable and bendable sensors based on the SiNW network have been successfully demonstrated, where the local strain distribution within the spring network can be directly observed and analyzed by finite element simulations. This SiNW network has a unique potential to eventually establish a new generically purposed waferlike platform for constructing soft electronics with Si-based hard performances.
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