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One transistor-two resistive RAM device for realizing bidirectional and analog neuromorphic synapse devices
Seokjae Lim1,2, Myounghoon Kwak1,2, Hyunsang Hwang1,2
1Center for Single Atom-Based Semiconductor Device, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
Nanotechnology
|August 22, 2019
Summary
This study introduces a novel one transistor-two resistive RAM (1T2R) device that achieves bidirectional and analog synaptic behavior. This artificial synapse overcomes limitations of current devices, enabling ideal performance even with non-ideal resistive RAM components.
Area of Science:
- Materials Science
- Electrical Engineering
- Neuroscience
Background:
- Artificial synapse devices often exhibit non-ideal switching behaviors, including unidirectional and abrupt conductance changes.
- These limitations hinder the development of efficient neuromorphic computing systems.
- Existing resistive RAM (RRAM) technologies struggle to replicate the nuanced plasticity of biological synapses.
Purpose of the Study:
- To propose and analyze a novel one transistor-two resistive RAM (1T2R) device architecture.
- To overcome the limitations of unidirectional and abrupt switching in artificial synapse devices.
- To achieve bidirectional and analog conductance modulation for improved synaptic emulation.
Main Methods:
- Development of a 1T2R device incorporating a unidirectional, analog switching Cu-based RRAM (Cu/Cu2-xS/WO3-x/W) with an internal voltage suppressor (Cu2-xS).
- Utilizing the subthreshold region of an NMOSFET for synaptic behavior calculations.
- Characterization of device performance, including on/off conductance ratio and linearity.
Main Results:
- The proposed 1T2R device successfully demonstrates bidirectional conductance changes despite using unidirectional switching RRAM elements.
- The integration of the Cu2-xS layer acts as an effective internal voltage suppressor.
- Improved on/off conductance ratio and enhanced linearity of conductance change were achieved due to the nonlinear characteristics of the NMOSFET subthreshold region.
Conclusions:
- The 1T2R device architecture offers a viable solution for creating artificial synapses with ideal behavior.
- This approach effectively mitigates the non-ideal switching characteristics of individual RRAM components.
- The developed device paves the way for more robust and efficient neuromorphic hardware.
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