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Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Band-Gap Nonlinearity in Lead Chalcogenide (PbQ, Q = Te, Se, S) Alloys
Sima Aminorroaya Yamini1, Vaughan Patterson1, Rafael Santos1
1Australian Institute for Innovative Materials (AIIM), Innovation Campus, University of Wollongong, Squires Way, North Wollongong, NSW 2500, Australia.
Abstract:
Narrow band-gap lead chalcogenides have been developed for several optical and electronic applications. However, band-gap energies of the ternary and quaternary alloys have received little attention compared with the parent binary phases. Here, we have fabricated single-phase ternary (PbTe)1- (PbSe) and quaternary (PbTe)0.9- (PbSe)0.1(PbS) and (PbTe)0.65- (PbSe)0.35(PbS) alloys and shown that although lattice parameters follow Vegard's law as a function of composition, the band-gap energies exhibit a substantial bowing effect. The ternary (PbTe)1- (PbSe) system features a smaller bowing parameter predominantly due to the difference in electronegativity between Se and Te, whereas the larger bowing parameters in quaternary alloys are generated from a larger crystal lattice mismatch and larger miscibility gap. These findings can lead to further advances in tuning the band-gap and lattice parameters for optical and electronic applications of lead chalcogenides.
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