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Updated: Jan 20, 2026
09:26
How to Build a Vacuum Spring-transport Package for Spinning Rotor Gauges
Published on: April 7, 2016
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Effect of Interfacial Roughness Spin Scattering on the Spin Current Transport in YIG/NiO/Pt Heterostructures
Lichuan Jin1, Kancheng Jia1, Dainan Zhang1
1State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , 610054 , China.
ACS Applied Materials & Interfaces
|September 5, 2019
Summary
Interfacial roughness in Yttrium Iron Garnet/Nickel Oxide/Platinum heterostructures enhances spin scattering, boosting spin current injection efficiency. This discovery offers potential for low-dissipation spintronic devices.
Area of Science:
- Spintronics
- Materials Science
- Condensed Matter Physics
Background:
- Interfacial properties are crucial for spin current injection in ferromagnetic (FM)/nonmagnetic (NM) heterostructures.
- Existing research focuses on impedance matching and spin-orbit coupling for spin current transport.
- Yttrium Iron Garnet (YIG)/Nickel Oxide (NiO)/Platinum (Pt) heterostructures are explored for novel spintronic applications.
Purpose of the Study:
- To investigate spin current transport in YIG/NiO/Pt heterostructures.
- To understand the role of the antiferromagnetic insulator NiO layer in modulating spin current injection.
- To explore the impact of interfacial properties, specifically roughness, on spin scattering and device performance.
Main Methods:
- Spin Hall magnetoresistance and inverse spin Hall effect measurements.
- Ferromagnetic resonance and spin pumping experiments.
- Atomic force microscopy and spherical aberration-corrected transmission electron microscopy.
Main Results:
- Insertion of NiO blocks magnetic proximity effects and anomalous spin Hall voltage from YIG.
- Ferromagnetic/antiferromagnetic exchange coupling at the YIG/NiO interface inhibits spin current transmission for thick NiO layers.
- Interfacial roughness between NiO and Pt significantly enhances spin scattering, increasing inverse spin Hall voltage and spin Hall magnetoresistance for thin/discontinuous NiO layers.
Conclusions:
- A novel interface roughness-dominated spin scattering mechanism was discovered in YIG/NiO/Pt heterostructures.
- This mechanism offers a new pathway for efficient spin current injection.
- The findings have significant potential for developing low-dissipation spintronic devices.
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