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Approaching Quantization in Macroscopic Quantum Spin Hall Devices through Gate Training.

Lukas Lunczer1,2, Philipp Leubner1, Martin Endres1

  • 1Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.

Physical Review Letters
|September 7, 2019
PubMed
Summary
This summary is machine-generated.

Quantum spin Hall edge channels show promise for dissipationless conduction. Gate training to modify potential landscapes enables conductance quantization in long channels, overcoming impurity scattering.

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Area of Science:

  • Condensed Matter Physics
  • Topological Insulators
  • Quantum Transport

Background:

  • Quantum spin Hall (QSH) edge channels are theoretically dissipationless 1D conductors.
  • Ideal quantized conductance (2e²/h) is limited to short channels, contradicting topological protection.
  • Impurity-induced potential landscape distortions hinder QSH transport.

Purpose of the Study:

  • Investigate methods to achieve conductance quantization in macroscopically long QSH channels.
  • Identify the primary obstacles limiting the performance of QSH edge channels.
  • Enhance the scattering length in HgTe-based quantum wells.

Main Methods:

  • Systematic variation of band gap energy.
  • Gate dielectric training to charge trap states and modify the potential landscape.
  • Transport measurements on HgTe-based quantum wells with varying channel lengths.

Main Results:

  • Enhancing the band gap did not improve conductance quantization.
  • Gate training to modify the potential landscape significantly improved conductance quantization.
  • Achieved conductance quantization in macroscopically long channels with a scattering length of 175 μm.
  • Identified impurity-induced potential landscape distortion and puddle formation as major obstacles.

Conclusions:

  • Potential landscape engineering, not band gap enhancement, is key to long-range QSH transport.
  • Gate training effectively mitigates impurity scattering effects in QSH systems.
  • Overcoming potential landscape distortions is crucial for realizing the full potential of topological insulator edge channels.