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Updated: Jan 20, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Lukas Lunczer1,2, Philipp Leubner1, Martin Endres1
1Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
Quantum spin Hall edge channels show promise for dissipationless conduction. Gate training to modify potential landscapes enables conductance quantization in long channels, overcoming impurity scattering.
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