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Ribosomal RNA (rRNA) sequence analysis revealed three distinct groups of cells: eukaryotes, bacteria, and archaea. In 1978, Carl R. Woese proposed the concept of domains, a taxonomic level above kingdoms, to differentiate these groups. He suggested that archaea and bacteria, despite their similar appearance, represent separate domains. Domains differ in rRNA, membrane lipid structure, transfer RNA, and antibiotic sensitivity.In this classification, animals, plants, and fungi belong to the...
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Functional Ferroic Domain Walls for Nanoelectronics.

Pankaj Sharma1,2, Peggy Schoenherr3, Jan Seidel4,5

  • 1School of Materials Science and Engineering, UNSW Sydney, Sydney, NSW 2052, Australia. pankaj.sharma@unsw.edu.au.

Materials (Basel, Switzerland)
|September 13, 2019
PubMed
Summary
This summary is machine-generated.

Domain walls in ferroic materials offer a path to new nanoelectronic devices. Understanding these topological defects is key to developing sustainable technologies at the nanoscale.

Keywords:
domain wallsferroelectricsmultiferroicsnanoelectronicstopological defects

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Controlling material functionalities at the nanoscale is crucial for advanced nanoelectronic technologies.
  • Topological defects, such as domain walls in ferroic materials, are key to exploring new functionalities.
  • Ferroelectric and multiferroic materials exhibit unique properties exploitable for next-generation devices.

Purpose of the Study:

  • To review recent advances in the study of domain walls in ferroic materials.
  • To focus on ferroelectric and multiferroic systems and their domain wall properties.
  • To highlight the development of prototype nanoelectronic devices based on domain walls.

Main Methods:

  • Literature review of domain wall research in ferroic materials.
  • Analysis of experimental and theoretical studies on ferroelectric and multiferroic domain walls.
  • Examination of case studies on prototype nanoelectronic devices utilizing domain walls.

Main Results:

  • Domain walls in ferroic materials exhibit tunable properties at the nanoscale.
  • Significant progress has been made in understanding and manipulating these defects.
  • Prototype devices demonstrate the potential of domain walls for novel electronic applications.

Conclusions:

  • Domain walls in ferroic materials represent a promising avenue for future nanoelectronic technologies.
  • Further research into controlling and utilizing domain wall functionalities is essential.
  • These findings pave the way for sustainable and advanced electronic devices.