Enhanced performance of vertical-structured InGaN micro-pixelated light-emitting-diode array fabricated using an ion...

Area of Science:

• Optoelectronics
• Materials Science
• Semiconductor Devices

Background:

• Vertical-structured LEDs offer advantages in power density and efficiency.
• Micro-pixelated designs are crucial for advanced display and lighting applications.
• Achieving high uniformity and preventing current leakage in small-scale devices remains a challenge.

Purpose of the Study:

• To present a new fabrication approach for high-efficiency vertical-structured InGaN micro-pixelated light-emitting diodes (μVLEDs).
• To investigate the impact of fluorine ion implantation on electrical isolation and carrier distribution in n-GaN layers.
• To demonstrate improved performance metrics, including output power density and current handling capability, compared to conventional LEDs.

Main Methods:

• Fabrication of a 25x25 μVLED array with 10 μm diameter pixels.
• Utilizing dual-energy fluorine (F) ion implantation to create high-resistivity selective areas in the n-GaN layer for electrical isolation.
• Characterization of carrier distribution, current leakage, and optical output power density.

Main Results:

• Fluorine ion implantation effectively created isolated regions, preventing sidewall current leakage.
• Improved carrier distribution uniformity was observed.
• The μVLED array achieved a maximum output light power density of 43 W/cm² at 3.06 kA/cm².
• Substantially higher current-handling capability and optical output power density compared to conventional broad-area LEDs were demonstrated.

Conclusions:

• The developed fluorine ion implantation technique is effective for fabricating high-efficiency vertical-structured InGaN μVLED arrays.
• The method enhances carrier injection efficiency and reduces junction temperature through ion-induced heat relaxation.
• This approach offers a promising pathway for next-generation high-performance micro-LED displays and lighting solutions.