Design for a 10 keV multi-pass transmission electron microscope
Related Experiment Video
Updated: Jan 19, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Stewart A Koppell1, Marian Mankos2, Adam J Bowman1
1Physics Department, Stanford University, 382 Via Pueblo Mall, Stanford, CA 94305, USA.
Abstract:
Multi-pass transmission electron microscopy (MPTEM) has been proposed as a way to reduce damage to radiation-sensitive materials. For the field of cryo-electron microscopy (cryo-EM), this would significantly reduce the number of projections needed to create a 3D model and would allow the imaging of lower-contrast, more heterogeneous samples. We have designed a 10 keV proof-of-concept MPTEM. The column features fast-switching gated electron mirrors which cause each electron to interrogate the sample multiple times. A linear approximation for the multi-pass contrast transfer function (CTF) is developed to explain how the resolution depends on the number of passes through the sample.
Related Concept Videos
10:25Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Transmission Electron Microscopic Imaging of Synaptic Vesicle Endocytosis in Mouse Hippocampal Neurons
14:21Performing In Situ Closed-Cell Gas Reactions in the Transmission Electron Microscope
09:20Microwave Assisted Rapid Diagnosis of Plant Virus Diseases by Transmission Electron Microscopy
09:26In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
08:31Sample Preparation and Experimental Design for In Situ Multi-Beam Transmission Electron Microscopy Irradiation Experiments
